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Creators/Authors contains: "Hsieh, Wen-Pin"

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  1. ; ; ; ; (, Nature Reviews Physics)
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  2. ; ; ; ; (, Earth and Planetary Science Letters)
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  3. ; ; ; ; ; ; ; ; (, Applied Physics Letters)
    Boron arsenide (BAs) is a covalent semiconductor with a theoretical intrinsic thermal conductivity approaching 1300 W/m K. The existence of defects not only limits the thermal conductivity of BAs significantly but also changes its pressure-dependent thermal transport behavior. Using both picosecond transient thermoreflectance and femtosecond time-domain thermoreflectance techniques, we observed a non-monotonic dependence of thermal conductivity on pressure. This trend is not caused by the pressure-modulated phonon–phonon scattering, which was predicted to only change the thermal conductivity by 10%–20%, but a result of several competing effects, including defect–phonon scattering and modification of structural defects under high pressure. Our findings reveal the complexity of the defect-modulated thermal behavior under pressure. 
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  4. ; ; ; ; ; ; ; (, Nature Communications)
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  5. ; ; ; ; ; ; (, Nanoscale and Microscale Thermophysical Engineering)
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  6. ; ; ; (, Proceedings of the National Academy of Sciences)
  7. ; ; ; ; ; ; ; ; ; ; et al (, Physical Review Letters)